—— 芯片百科 ——

描述

The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

特性

应用

相关链接

—— 相关型号 ——

• HGTP12N60B39A
• HGT1S12N60C3DS
• HGTG40N60A4
• HG74ALVC162835C
• HGT1S7N60C3DS
• HGT1S7N60A4S
• HGT1N30N60A4D
• HGT1S14N36G3VL
• HGT1S7N60A4S
• HGT5A40N60A4D
• HGT1S3N60B3DS
• HG-C1050-P
• HGH25N120A
• HGT1S2N120CNS
• HGTD1N120BNS

—— 替代型号 ——

HGTG40N60A4

导出替代信息

—— 购买渠道 ——

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