—— 芯片百科 ——

描述

TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on)= 3.0 OHMThis high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety marginagainst unexpected voltage transients.• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSSand VDS(on)Specified at Elevated Temperature

特性

应用

相关链接

—— 相关型号 ——

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—— 替代型号 ——

MTP4N80E

导出替代信息

—— 购买渠道 ——

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